PRODUCTION ENGINEERING MEASURE: RELIABILITY THROUGH PROCESS IMPROVEMENT (EXTENSION TO 2N2525 TRANSISTOR FAMILY).
Abstract
Process improvement work was conducted to obtain a silicon triple diffused transistor based on type 2N2525 with a maximum operating failure rate of 0.01% per one thousand hours at a 90% confidence level at 25C. Successful improvements were made in the flange-to-ceramic bonding, metallizing, feed-through pin seal, die attachment, and final closure. A thorough understanding of metal to ceramic interfaces was gained. The performance of the package summarized as follows: (1) Hermeticity is very good and unaffected by high temperatures and environmental testing. (2) The overall mechanical strength of the package is very good in every respect, with the possible exception of the ultimate strength of the BeO ceramic. At present work is in progress to increase its strength to equal that of aluminum oxide ceramics. (3) Cold weld capping yields exceed 95%, thus having great promise for future production. (4) Heat dissipation is extremely good.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1965
- Accession Number
- AD0630784
Entities
People
- A. Brand
- B. Wiley