EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (POWER TRANSISTORS).
Abstract
The theory of irradiation data analysis is worked out in accordance with the techniques of the analysis of variance. The basic irradiation data consists of two sets of numbers associated with each design variation (treatment). The first set is the slope of the common base current gain as a function of fluence for a particular emitter current. The second set, which characterizes the response of a device to a pulse of ionizing radiation, is the maximum amplitude of the transient collector base leakage current produced by the pulse. In preparation for data analysis by digital computer, a double subscript notation is worked out, representing a particular design factor and a treatment number respectively, and is applied in the development of various sum-of-square expressions required for the analysis of variance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0630836
Entities
People
- G. D. Thomas
- J. J. Mazenko
- V. R. Honnold
Organizations
- Hughes Aircraft Company