TWO-PORT NETWORK PARAMETERS OF THE PIEZOELECTRIC SEMICONDUCTOR ELECTROACOUSTIC AMPLIFIER,
Abstract
The electroacoustic amplifier utilizes electron-acoustic interactions in piezoelectric semiconductors. The device has promise as a possible high intensity acoustic source at frequencies in the range where present generation techniques (e.g., high harmonic operation of quartz devices) are of limited utility, and as an amplifier or delay line at microwave frequencies. Its characteristics as a two port network are extremely important. The basic properties of the electron-acoustic interaction are developed and the characteristics of the primary forward and reverse waves are formulated in terms of the electron drift velocity. These results are used, together with the appropriate boundary conditions, to evaluate the two-port network parameters of the electro-acoustic amplifier. Using these network parameters, it is shown that criteria can be developed for the existence of undamped acoustic oscillations, and for the occurence of activity when the device is employed for amplification or delay line application. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1966
- Accession Number
- AD0631035
Entities
People
- Louis De Pian
- Robert M. Moore
Organizations
- George Washington University