MEASUREMENT OF THE LIFETIME OF MINORITY CURRENT CARRIERS IN GE AND SI BY OBSERVING THE PHOTOCONDUCTIVE DECAY OF THE SPREADING RESISTANCE UNDER A POINT CONTACT.

Abstract

The paper presents a study of the photoconductive decay of the spreading resistance of Ge and Si under various exciting lights and surface conditions. The influence of the surface recombination velocity and exciting light on the shape of the decay curve is also studied, and a simple method is described for testing the volume lifetime.

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1966
Accession Number
AD0631102

Entities

People

  • Pan Gui-sheng
  • Zhuang Wei-hwa

Organizations

  • Emmanuel College

Tags

DTIC Thesaurus Topics

  • Measurement
  • Minority Groups
  • Physical Properties
  • Republic
  • Resistance
  • Surface Properties

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Structural Dynamics.