AN INVESTIGATION OF CHARACTERISTICS AND APPLICATIONS OF TUNNEL AND BACKWARD DIODES,
Abstract
The analyses and measurements are primarily concerned with (1) the energy band structure of degenerate semiconductors deduced from junction characteristics, and (2) the use of the tunnel and backward diode in circuit control elements. The energy band structure of germanium, gallium arsenide, and gallium antimonide semiconducting degenerate material was studied primarily at low temperatures through measurements of tunnel and backward diode characteristics. A simplification based upon the calculations of Price, Radcliffe (IBM J. of Rev. and Dev. 3:364-371 (1959)) and Kane (J. Appl. Phys. 32:83-91 (1961)) was found to provide the most accurate fit to the current-voltage characteristics of the diodes observed. Potentially useful tunnel diode-resistor networks for control and transducer applications are considered. A detailed analysis has been made for the network consisting of two matched tunnel diodes and a fixed resistor. This network (termed the bias-controlled -tunnel-pair) appears useful as a basic element for performing peak threshold summation logic with over 30 db. isolation per stage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1962
- Accession Number
- AD0631244
Entities
People
- William N. Carr
Organizations
- Carnegie Institute of Technology