THIN-FILM POLYCRYSTALLINE FIELD-EFFECT TRIODE.
Abstract
A process of stabilizing cadmium sulfide TFT's has been developed. Preliminary data based on 1000-hour shelf-life and operating-life tests indicate that the stablized TFT's do not have the reversible gate insulator-semiconductor instability. Shelf life and operating life have revealed that random I sub D instabilities have been greatly reduced. From early operating life-test comparisons, the long-term decay observed in previous TFT's has also been greatly reduced. Operating tests of units at 130C and 185C for 300-hour periods indicate the presence of a long-term decay mechanism. Integrated thin-film three-input gate circuits incorporating CdS TFT's and Nichrome resistors have been fabricated and tested. A procedure for depositing CdSe TFT's upon an unheated substrate has yielded good reproducibility, stability, and life. An unencapsulated circuit incorporating 540 CdSe TFT's was operated over 2000 hours at room temperature before any units failed. Another circuit of the same type has operated 700 hours at 85C without failure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1965
- Accession Number
- AD0631409
Entities
People
- A. G. Sadasiv
- J. J. Bowe
- P. K. Weimer
- R. L. Schelhorn
- W. H. Laznovsky
Organizations
- RCA Corporation