THIN-FILM METAL-BASE TRIODES.
Abstract
An experimental and theoretical study of an aluminum-aluminum oxide-aluminum triode showed it to have active-device characteristics equivalent to those of two diodes back-to-back. The phenomena involved can be explained in terms of tunnel emission. The report includes a survey of the literature, and proposals for investigation of other thin-film metal-base triodes of various structures and compositions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1966
- Accession Number
- AD0631875
Entities
People
- B. D. Evans
Organizations
- Navy Electronics Laboratory