THE EFFECT OF ANNEALING THIN FILM CAPACITORS,
Abstract
An annealing treatment upon thin film capacitors using silicon monoxide (SiO) as the dielectric will significantly increase the d-c resistance and decrease the capacitive dissipation of good thin film capacitors. However, initially inferior capacitors generally do not show improvement after annealing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 27, 1965
- Accession Number
- AD0631955
Entities
People
- W. M. Mcguire
Organizations
- Naval Air Warfare Center, Indianapolis