IMPURITY DOPED PHOTOCONDUCTORS.
Abstract
A model for the optical cross section of deep centers, which is superior to the hydrogenic model used for shallow centers, has been developed. Ga-doped Si appears to be a sensitive extrinsic photoconductor that can be more heavily doped than available Ge photoconductors. The characteristics of the particular Ga-doped Si examined are Na = 1.2 x 10 to the 16th power/cu cm, N sub D = 2 x 10 to the 14th power/cu cm, E sub A = 0.071ev, Blip temperature = 40K, Detectivity = 6 x 10 to the 8th power cm(cps) 1/2/watt, and tau = 10 to the minus 9th power second at 40K. These results appear to justify examination of Si doped closer to the Ga solubility limit (4 x 10 to the 19th power/cu cm). (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1965
- Accession Number
- AD0632006
Entities
People
- C. J. Repper
- R. B. Emmons