EVALUATION OF STANDARD ALUMINUM ELECTRODE THIN FILM CAPACITORS.
Abstract
The report shows that the characteristics of thin film capacitors utilizing aluminum electrodes and SiO dielectrics can be improved by annealing at 450C. Some indication is given to the effects of various process parameters during dielectric deposition and supports the general concensus that consistently good thin film capacitors are rather difficult to fabricate. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 17, 1965
- Accession Number
- AD0632028
Entities
People
- W. Mcguire
Organizations
- Naval Air Warfare Center, Indianapolis