CONTINUOUS ULTRAVIOLET ABSORPTION BY NEUTRAL SILICON,
Abstract
Photoionization cross sections (bound-free absorption coefficients) were measured for the 3s2 3p2 triplet-P ground state and singlet-D excited level of the neutral silicon atom. The measurements, made in absorption with the use of reflected shock techniques,yield cross sections of about 37 and 34 megabarns respectively, near the ionization limits. Theoretical quantum defect calculations give satisfactory comparisons. The next excited singlet-S level is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0632105
Entities
People
- John C. Rich
Organizations
- Harvard College Observatory