INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Abstract
The report gives the first results of transient radiation damage experiments designed primarily to cover a wide range of electron flux (about 10 to the 5th power-10 to the 10th power e/sq cm in the pulse). The incident electron energy was 48 MeV and the electron beam pulse widths used were in the range 1 to 4.5 micro sec. The samples studied were 100 ohm -cm floating zone silicon phosphorous and indium doped. The irradiations were carried out with the sample at 100, 200 or 300K to roughly check temperature dependence. The probes used to detect transient radiation damage are the conductivity and Hall effect voltages. The results indicate a saturation in the Hall effect and conductivity voltage pulses for electron fluxes > or about 10 to the 9th power e/sq cm. Both the fractional Hall effect and conductivity voltages (Delta V/V) have the same flux dependence. The main effect in transient radiation damage experiments is one of ionization and recombinations of excess electron hole pairs, and moreover transient atomic displacement damage if present is small and not detectable. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1966
- Accession Number
- AD0632458
Entities
People
- A. Robb Frederickson
- John C. Corelli
Organizations
- Rensselaer Polytechnic Institute