THE ADVANTAGES OF THERMAL CONDUCTIVITY IN MEASURED RADIATION PRODUCED COMPLEXES IN SILICON.
Abstract
Phonon thermal conductivity theory is explained to show how thermal conductivity measurements can give the number and size of radiation produced complexes. A low temperature thermal conductivity apparatus is described which has a special sample holder for radiation experiments. Proposed experiments to study the radiation damage complexes in silicon containing oxygen and/or carbon are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0632467
Entities
People
- Charles J. Glassbrenner