INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME XI. BIPOLAR TRANSISTORS.
Abstract
Both bipolar transistor theory and the characteristics and design of transistors in integrated circuits are discussed. The discussion of transistor theory includes not only the conventional transistor models of uniformly doped emitter, base, and collector regions and of constant electric field in the base (exponential impurity doping in the base) but also includes models for general impurity profiles in the emitter, base, and collector regions. Both small signal models and large signal models are discussed. High current phenomena including high injection and emitter crowding phenomena are considered. Effects which are important at low currents are also discussed. These are generation-recombination effects in junction depletion regions and phenomena associated with surface space charge layers. Numerical examples are presented throughout the volume to illustrate the various models developed and discussed. With the exception of grounded emitter current gain, transistor parameters can be fairly well correlated with theory. In addition to general transistor theory, the characteristics and design of transistors in integrated circuits are discussed. This includes a discussion of typical transistor structures, isolation problems, topological design, multiple transistor structures, and the differences between discrete and integrated transistors. Design examples are included to illustrate the factors discussed. A small number of typical uses of transistors in integrated circuits are included. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0632556
Entities
People
- J. R. Hauser
Organizations
- RTI International