THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.
Abstract
During the past quarter the following was accomplished: (1) Modification of the cermet-evaporation system with respect to powder feed, resistance and film rate monitoring, and electron gun orientation to obtain more uniform deposition characteristics. (2) Design of a new resistor test mask set to permit more rapid and more exact measurement of resistor films. (3) Continued investigation as to the best method of depositing aluminum for use as a thin film capacitor lower conductor either by itself or in combination with other materials such as tantalum or titanium. (4) Ordering the necessary equipment to r-f sputter dielectric films. (5) Improvement of film thickness measurement techniques using the ellipsometer and interferometer. (6) Continuation of the 1000-hour life tests on the compatibility vehicles consisting of a thin film resistor, transistor, and capacitor and (7) Acquisition and use of equipment to study methods of making high frequency measurements of thin film components. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0632848
Entities
People
- R. W. Wilson
Organizations
- Motorola Mobility