QUANTUM THEORY OF MOBILITY IN DOPED SEMICONDUCTORS.
Abstract
Existing quantum transport theories relevant to the problem of electron mobility in semiconductors due to ionized impurity scattering problem are extended and simplified to obtain a mobility formula, valid for weak impurity potentials, which includes corrections due to coherent scattering from groups of impurities.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0632935
Entities
People
- Elvin James Moore
Organizations
- Harvard University