HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).
Abstract
The report presents results obtained from preproduction testing of a 2N1765 device lot, solutions to problems involving leakage current, dv/dt, and turn-on time, and descriptions of work performed on life test facilities. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1966
- Accession Number
- AD0633141
Entities
Organizations
- Motorola Mobility