TRANSISTOR, VHF, SILICON, POWER TYPE EL-2N (X-9) 5W 500 MC PEM.
Abstract
Processing of lots continues to reduce the base width to 0.3 to 0.45 micron on a controllable basis. Sputtered metallizing has been accomplished. The glassified molded package has been modified to facilitate its use in the circuit and to simplify assembly. Interim interdigitated (four) and interrupted emitter (six) patterns were produced and evaluated for optimum performance. Only the interdigitated pattern with the largest dimensions (0.3 mil metal strips with 0.2 mil clearance) was noticeably poorer than the rest. The remaining nine patterns typically produced 10 watts at 500 Mc and 28 volts, with 6.0 to 7.5 db of power gain and 60 to 70% collector efficiency. These results were used to produce a final interdigitated pattern, which has initially produced 10 watts with 7.0 to 7.5 db of power gain with 65 to 70% collector efficiency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 31, 1966
- Accession Number
- AD0633147
Entities
People
- J. Crishal
- J. Rice
- P. Risinger
- R. Clarke
- W. Weisenberger