THE INFLUENCE OF OXYGEN IN THE ULTRAHIGH VACUUM RANGE ON ELECTRICAL PROPERTIES OF CDS.

Abstract

Undoped CdS single crystals are kept in a vacuo of p < 10 to the -9th power torr. Adsorption of different gases (O2, H, CO2) was allowed by backfilling the system up to a pressure in the 0.00001 torr range through a sensitive leak valve; crystal conductance is monitored simultaneously. Changes of the photocurrent up to 0.000003 amperes and sensitivity to changes in the partial pressure of oxygen as small as 10 to the -10th power torr are reported for different temperatures. Gases are desorbed by a time linear increase of temperature from 80K to 600;K. The desorption is monitored with a mass spectrometer locked in the investigated mass number. Simultaneous changes of electrical properties are studied using TSC curves. Consequent desorption show, in general, more than one desorption peak, indicating multisite adsorption. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1966
Accession Number
AD0634032

Entities

People

  • Karl W. Boer
  • RenĂ© Schubert

Organizations

  • University of Delaware

Tags

DTIC Thesaurus Topics

  • Adsorption
  • Crystals
  • Desorption
  • Electrical Properties
  • Mass
  • Mass Number
  • Mass Spectrometers
  • Partial Pressure
  • Physical Properties
  • Sensitivity
  • Single Crystals
  • Spectrometers
  • Ultrahigh Vacuum
  • Vacuum

Fields of Study

  • Physics

Readers

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  • Semiconductor Device Technology