RELAXATION PHENOMENA AT HIGH ELECTRIC FIELD ON THE SURFACES OF INDIUM ANTIMONIDE.

Abstract

It was found that high transverse pulsed electric fields applied to indium antimonide surfaces brought about tunneling currents which are extracted through a surface film to the semiconductor bulk. A slow surface state has been located approximately 0.06 eV below the conduction band edge on the (111) A surface of n-InSb. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1966
Accession Number
AD0634345

Entities

People

  • Howard Huff
  • Shinji Kawaji

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Electric Fields
  • Electronics
  • Energy Bands
  • Indium
  • Indium Antimonides
  • Inorganic Chemicals
  • Quantum Tunneling
  • Semiconductors
  • Solid State Electronics
  • Transverse
  • Tunneling

Fields of Study

  • Materials science

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene