INVESTIGATION OF TWO-CARRIER INJECTION ELECTROLUMINESCENCE.
Abstract
Work on the crucial problem of II-VI p-n injection electroluminescence, suppression of self-compensation, was actively pursued. Experiments on photo-uncompensation and on electrolytical vacancy extraction have been inconclusive so far. Work on two new approaches, ion implantation doping and vacancy suppression by very high hydrostatic pressure, was started. The technique to render ZnS, ZnSe, and ZnTe crystals n-type is described in detail. Progress was made in the field of II-VI crystal growth: Epitaxial layers of ZnSe-x Te-1-x were grown on n-type ZnSe single-crystal substrates by vapor transport in an open-flow system. Large ZnTe:I crystals were grown in sealed evacuated ampoules of a novel design in a furnace permitting visual inspection. A new class of solvents for solution growth of II-VI crystals was discovered, the group V chalcogenides. Photoluminescent narrow-line emission in neodymium-doped ZnSe-x Te-1-x is intensified by coactivation with phosphorus. The spectra and their dependence on various parameters were analyzed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 14, 1966
- Accession Number
- AD0634398
Entities
People
- Albert G. Fischer
- William H. Fonger
Organizations
- RCA Corporation