INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Abstract
Ttransient radiation effects induced in silicon irradiated at 122K and 300K by pulses of 48 MeV electrons were studied using the transient response of resistivity and Hall effect voltages as the measuring probes. Results are given for one ohm-cm phosphorus-doped n-type silicon and a 100 ohm-cm boron-doped p-type sample. In the case of one ohm-cm silicon the results clearly show the actual buildup of excess electrons produced by ionization during the time the electron pulse is irradiating the sample. Moreover, the shape of the pulse during buildup is independent of temperature so long as the electron beam pulse is kept constant. Dependence of the number of injected excess carriers on the ionization intensity (total integrated electron flux in the pulse) was found to be linear up to excess carrier concentrations of 10 to the 17th power/cu.cm. The lifetime is found to increase linearly with injection implying that the recombination may be dominated by one defect energy level. The significant 'damage mechanism' can be understood by considering only the transient ionization effects, since atomic displacements effects are small and insignificant. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0634488
Entities
People
- A. Robb Frederickson
- James W. Westhead
- John C. Corelli
Organizations
- Rensselaer Polytechnic Institute