RESEARCH IN PURIFICATION AND SINGLE CRYSTAL GROWTH OF II-VI COMPOUNDS.
Abstract
A study was made of the factors influencing the synthesis, purity, and crystallization of Group II-VI compound semiconductor materials. Synthesis operations were limited to CdS, ZnSe and CdTe. A milestone in purity was reached in CdS lot 274 when only 325 parts per billion total impurities were found by mass spectrographic analysis. Purities in general were believed to be somewhat better than usual although this cannot be supported by the emission spectrographic data received. Crystals of CdS, ZnS, CdTe, and ZnSe were grown from the melt. Mixed crystals of CdZnS, ZnSeTe, and ZnCdSe were also grown. Tests of the controller and programmer for the new pressure furnace system were concluded. The units functioned as anticipated and demonstrated that crystals grown using this apparatus are superior in appearance to ones grown by manual control. Also tested was the cover for the new pressure furnace. The successful completion of the tests on this item cleared the way for hardening of the furnace design and proceeding with the construction. The autoclave purchased for the hydrothermal growth of crystals was setup and tested. Crystal growth will be started at once. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 14, 1966
- Accession Number
- AD0634591
Entities
People
- G. N. Webb
- L. W. Brown
- R. H. Fahrig