A NEW MICROWAVE SEMICONDUCTOR OSCILLATOR,
Abstract
Epitaxial GaAs varactor diodes featuring low junction capacitance and series resistance oscillate when reverse biased into avalanche. The oscillations are both of a pulsed and continuous nature. CW outputs in excess of 25 mW with over 5% efficiencies in the 13 GHz range have been obtained on a reproducible basis. Turnability has been demonstrated with oscillation bandwidths of 6 to 10% recorded in both X- and K sub u-bands. In addition, CW oscillations of more than 0.5 mW in less than optimum circuitry have been observed at frequencies above 30 GHz. CW and pulsed oscillations have also been observed using silicon p-n junction avalanche oscillators. However, rf output and efficiencies are on an order of magnitude less than that obtained with GaAs units.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0634689
Entities
People
- F. A. Brand
- J. J. Baranowski
- V. J. Higgins
Organizations
- United States Army Communications-Electronics Command