STRUCTURES FOR 300-WATT, 400MHZ UHF POWER TRANSMISSION.
Abstract
Capacitance measurements are presented for integral versus wire-bonded leads. The measurements indicate a 20 percent reduction in C sub ob because of the elimination of the bonding areas. A package design is presented which allows the assembly of integral lead devices in a modified TO-60 case. Electrical measurements are given for devices which have buried diffused N+ conductance plugs. The results show the expected decrease in capacitance but also show a loss in rf power output. This loss has been attributed to a residual high-resistivity region under the periphery of the emitter. Wafers have also been processed by a modified refill-method to form N+ plugs. This technique utilizes a refill with high-resistivity silicon in areas surrounding each emitter site, and has the advantage of allowing emitter diffusion to be performed in the original bulk silicon. Three tupes of failures, produced under dc and rf test conditions, were observed on the TA2657 transistor. Illustrations and visual characteristics of each type of failure are given. Design considerations of thin-film inductors as well as measurements on two experimental coil designs are presented. MOS capacitors were constructed and values are given for capacitance versus voltage and oxide thickness. The theory of operation for and the circuitry of a distributed line amplifier are discussed. Power outputs of 36 watts at 400 MHz have been achieved by four 2N3632 transistors in this circuit. Operation of a single package Darlington-connected power transistor circuit has been shown feasible at high frequencies. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0634744
Entities
People
- D. Jacobson
- F. Katnack
- R. Minton
- R. Rosenzweig