AN ADVANCEMENT IN TRANSISTOR SECOND BREAKDOWN PERFORMANCE USING MOLYBDENUM METALIZATION.

Abstract

Transistors which have become inoperative due to collector-emitter short circuits have usually been driven into second breakdown itself, however, is not the destructive mechanism. Alloying of the contact metalization into the device produces the short circuit which is observed. This report describes the experimental results of transistors having molybdenum-aluminum metalization compared to devices with only aluminum contacts. The results indicated that devices with molybdenum, when driven into second breakdown, would outlive aluminum units with respect to current by a factor of three. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1966
Accession Number
AD0634763

Entities

People

  • Edward B. Hakim

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Aluminum
  • Circuits
  • Elements
  • Metals
  • Molybdenum
  • Short Circuits
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.