PRODUCTION ENGINEERING MEASURE FOR INSULATED GATE FIELD EFFECT TRANSISTORS.
Abstract
A complete basic design is presented for the high frequency Insulated Gate Field Effect Transistor, MOS stability is examined and a general filure mode discussion is presented. It is found that most noncatastrophic failures result from the movement of charged ionic species in the gate oxide. In order to minimize this instability different stabilizing techniques are reported with emphasis on those applicable to the MOS production area. The effect of various etches, solvents, and rinses on device stability and performance are listed, and results are presented on the difference in processing sequences such as hot evaporation and cold evaporation, with and without a phosphorus-stabilized system. The production sequence for the RF MOSFET is listed as well as progress in improved packaging techniques. Final probing and testing capabilities for the RF MOS device are outlined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1966
- Accession Number
- AD0634828
Entities
People
- Dale Reinke
- James George
Organizations
- Motorola Mobility