HETEROJUNCTION DEVICES.
Abstract
Using tellurium as a transport agent, n- and p-type silicon was deposited on n- and p-type GaP. Heterojunction devices of these deposits were made, their electrical and optical characteristics were determined, and energy band profiles, as well as current carrying mechanisms, are proposed to explain the majority of the experimental results. The deposition of Si upon GaP is carried out in a closed ampoule at about 850C. Transport of Si is believed to be due to temperature dependence of equilibrium constant of a chemical reaction involving silicon telluride compounds. The I-V characteristics with and without light, photocurrent-photo energy spectra for both bias polarities, and capacitance-voltage characteristics with and without light applied are discussed. Preliminary results on epitaxial deposition of Ge on Si are presented. In this eptiaxial deposition process, GeC14 is used as source while Si substrates are used as seeds. Adequately thick and smooth deposits were obtained. Electrical and photo-conductivity measurements seem to indicate the existence of heterojunctions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0635026
Entities
People
- Donald E. Boyce
- Girtz Zeidenbergs
- Richard L. Anderson
- S. Yawata
- Tong Huang
Organizations
- Syracuse University