RESEARCH FOR DEVELOPMENT OF EPITAXIAL TECHNIQUES FOR USE IN FABRICATION OF SILICON CARBIDE DEVICES.
Abstract
Attempts were made to fabricate p-n junction diodes and SiC channel isolated-gate field-effect transistors. P-type doping was not possible and, consequently, the p-n junction work was terminated without success. Attempts to make n-channel, SiC IGFET's on silicon substrates were not successful, nor were attempts to fabricate the same structures on sapphire substrates. Silicon IGFET structures with acceptable device quality parameters were grown using identical techniques, demonstrating the feasibility of the approach. No acceptable SiC device characteristics were demonstrated during this contract. This could be attributed to poor structure quality, or the presence of an anomaly such as impurity bands which would inhibit device action. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 13, 1966
- Accession Number
- AD0635136
Entities
People
- Don Jackson
Organizations
- Motorola Mobility