RADIATION EFFECTS ON INSULATED GATE FIELD EFFECT (MOS) INTEGRATED CIRCUITS.
Abstract
A report is given which covers the third quarter's effort of a radiation effects study on insulated gate field effect MOS integrated circuits. The activity for the quarter was concentrated on pulsed radiation testing at the Martin Flash X-Ray Facility and Rensselaer Polytechnic Institute Linear Accelerator Facility, and on the preparation for neutron tests at DORF. The date reported here are for the transient current response of the gate or drain lead of a 'dummy' MOS device packaged in a TO-5 can and an empty TO-5 socket, as a function of bias, and for the transient response of the gate or drain lead of six n-channel depletion and eight p-channel enhancement MOS transistors. The peak transient drain current for the p-channel units was measured to range from -460 to +620 microamperes and from 110 to 700 microamperes for the n-channel units. The data were taken at 1.6 x 10 to the 7th r/sec with the magnitude and duration of the response being a function of gate resistance and gate voltage. Measurements of the response of specially fabricated 'dummy' MOS devices have demonstrated that the devices tested have a larger response (300 microamperes) when leads are positively biased than when the leads are negatively biased (-78 microamperes). The data also show that the current response is nonlinear with voltage and that interaction between leads can occur. This interaction is a function of the relative magnitude and polarity of the bias on adjacent leads. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1966
- Accession Number
- AD0635198
Entities
People
- David M. Long
- H. L. Flesher
Organizations
- Glenn L. Martin Company