EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (POWER TRANSISTORS).
Abstract
The objective of the program is to determine particular design characteristics and fabrication techniques for a silicon planar power transistor that will minimize the effects of ionization and lattice displacements caused by high energy radiation. The Third Quarter was devoted to writing a digital computer program to perform an analysis of variance on the experimental data previously obtained and performing the irradiations on the first group of experimental devices. The report describes the experimental procedure used in conducting the neutron irradiation, the writing of the digital computer program and its checkout, and, finally, a sample analysis of variance at a low injection level. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1966
- Accession Number
- AD0635218
Entities
People
- Gary D. Thomas
- Jerome J. Mazenko
- Vincent R. Honnold
Organizations
- Hughes Aircraft Company