STUDY FOR GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Abstract
This report summarizes the previous year's work, as well as presenting developments during the fourth quarter. The detailed transistor study is emphasized, and shows that the accuracy of the calculated results depends on the accuracy of the calculated primary photocurrent and on the accuracy of the lumped-model parameters in representing the electrical behavior. If the common-emitter ionizing-radiation transient response is calculated without prior ionizing radiation experiments, the calculated result is generally lower than the observed response by about a factor of three over the range of common-emitter circuit parameters. If the internal carrier generation rates are adjusted such that the observed collector primary photocurrent agrees with the calculated waveform, the calculated common-emitter transistor response accurately follows the observed response. Here, accurately means certainly less than a factor of two in the worst combination of external circuit parameters, and usually much better than a factor of two. The Accuracy is limited by the detail of the representation of the transistor electrical parameters. The lumped-model representation of the transistor can accurately predict the critical electrical and ionizing-radiation induced transient response of widely varying types of devices. Important 'second-order' effects can be incorporated in the model directly, and always in terms of the basic semiconductor and geometrical parameters. The most serious problem seems to be the determination of the carrier generation rates in the transistor. Independent dosimetry can be used to characterize the exposure radiation environment, but effects of the more complex environment inside the transistor can also be considered. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1966
- Accession Number
- AD0635228
Entities
People
- Jeffery E. Raymond
- Robert L. Johnson