INVESTIGATION OF SOLID STATE DEVICES AND MATERIALS.
Abstract
Procedures and techniques were developed for the purpose of evaluating new semiconductor active devices. The characteristics of interest are noise, gain, frequency limits of operation and temperature stability. Theoretical and experimental results indicate that the potential discontinuity associated with metal-semiconductor injuctions is dependent upon interface contaminations and surface state effects. A study of materials and fabrication techniques led to more efficient diode lasers. A theoretical explanation was derived for the fine structure of the far-field radiation pattern exhibited by GaAs diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1966
- Accession Number
- AD0635287
Entities
People
- Basil L. Cochrun
Organizations
- Northeastern University