THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.
Abstract
This report summarizes the work performed to develop techniques for fabricating thin conductive, resistive and dielectric films by complete or partial oxidation of a suitable metallic film deposited in predetermined patterns and sequences. Gold-tantalum alloys have been reactively sputtered successfully, using separate cathodes at different potentials for each metal. Sample gold-doped tantalum resistors from idela slices were evaluated for temperature coefficient and power dissipation, and life tests were begun to evaluate the merits of the material. The resistors produced are characterized by temperature coefficient of resistance (TCR) values of less than 100ppm/C, and extremely high power dissipation of the order of 1 to 5 watts/square inch. The resistors are readily etched, and sheet resistances up to 300 ohms/square are possible. No additional work was done to improve the deposition process. The advantage of an improved TCR does not justify additional effort since a similar or better TCR may be achieved using nichrome resistors of the same ohm/square value. Development of the sputtering system has required additional time to correct several design and/or manufacturing faults revealed during system test. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1966
- Accession Number
- AD0635386
Entities
People
- M. J. F. Gaze
Organizations
- Texas Instruments