SURFACE EFFECTS OF RADIATION ON MICROELECTRONIC DEVICES: PART II.

Abstract

Both intermediate and semipermanent effects of ionizing radiation were studied for three types of metal-oxide-silicon field effect transistors (MOSFET's): the n-channel 2N4038 (enhancement), the p-channel 2N3638 (enhancement), and an n-channel silicon-on-sapphire thin film (depletion) device. Intermediate effects were studied by the observation of conductivity changes as a function of successive irradiations at various bias points. Both conductivity changes and changes in transconductance were observed in the study of semipermanent effects resulting from each irradiation. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 15, 1966
Accession Number
AD0635583

Entities

People

  • Barbara M. Kuehne
  • Daniel Binder
  • Donald A. Steele

Organizations

  • Hughes Aircraft Company

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Conductivity
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Films
  • Ionizing Radiation
  • Metal Oxides
  • Observation
  • Oxides
  • Radiation
  • Sapphire
  • Semiconductor Devices
  • Thin Films
  • Transistors

Readers

  • Nuclear and Radiation Engineering.
  • Polar and Arctic Studies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics