JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS.

Abstract

The current state of progress in the synthesis, junction fabrication, and lamp and laser operation of Ga(As1-xPx) is described. The effect of the considerable depth of donor states near the indirect <100> conduction band minimum is shown to reduce the high-energy limit (reduces x) of laser operation in Ga(As1-xPx). Silicon p-'i'-n deep-level oscillators are described that operate beyond 100 MHz under dc bias. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1966
Accession Number
AD0635620

Entities

People

  • C. J. Nuese
  • G. Stillman
  • J. S. Moore
  • M. D. Sirkis
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Electronics
  • Energy
  • Energy Bands
  • Fabrication
  • High Energy
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Oscillators
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds

Fields of Study

  • Materials science
  • Physics

Readers

  • Electrical Engineering
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics