RADIATION STUDY ON MOS STRUCTURES.

Abstract

Ionizing radiation causes the build-up of a positive space-charge within the oxide on an MOS structure. The location of this space-charge and the kinetics of its formation and annealing have been studied experimentally. On the basis of these experiments, a simple model has been proposed which relates this space-charge to the defect structure of the oxide and provides results in good agreement with the data. Photocurrents flowing in the oxide due to X-rays and ultraviolet light have been used in the interpretation of the experiments and have made possible the construction of detailed energy band diagrams of the MOS structure. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1966
Accession Number
AD0636163

Entities

People

  • A. S. Grove
  • E. H. Snow

Tags

DTIC Thesaurus Topics

  • Agreements
  • Annealing
  • Construction
  • Electromagnetic Radiation
  • Energy Bands
  • Ionizing Radiation
  • Kinetics
  • Radiation
  • Space Charge
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Space