SEMICONDUCTOR AND O-TYPE AMPLIFIER INVESTIGATIONS.
Abstract
Electron-beam profiles are presented for nonlinear traveling-wave amplifiers in which the beam is focused with the Brillouin field and for devices with B > B sub Br. The Boltzmann-Vlasov equation is used to analyze the interaction between a beam and a slow-wave circuit, and a new normalization integrate in the sense of making it simpler to obtain convergent numerical solutions. Experimental results are presented on microperveance-one and microperveance-two guns and the design of the r-f beam analyzer equipment is discussed. The digital computer program for the analysis of magnetron injection guns has been improved with regard to stability of the solutions and accuracy. Experimental tests on the magnetron injection gun UHF TWA are carried out with emphasis on the optimization of the magnetic field distribution in the gun region in order to minimize the amplifier noise figure. A minimum noise figure of 15.3 db was obtained for a beam current of 410 ma and a beam power of approximately 1400 watts. Processes are described for applying ohmic contacts to n-type gallium arsenide with resistivities in the range of 0.22 to 10 ohm-cm. Principal effort has been on sintered contacts which are suitable for low duty-cycle operation of Gunn diodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0636261
Entities
People
- Joseph E. Rowe
Organizations
- University of Michigan