THE EFFECT OF AMBIENT BACKGROUND ON THE PERFORMANCE OF LEAD SULFIDE AND SILICON PHOTODETECTORS.
Abstract
This report presents a summary of several years of investigation into characteristics of chemically deposited, lead sulfide, near-infrared photoconductors and broad-area, diffused junction, silicon, near-infrared photodiodes exposed to actual and simulated ambient background conditions. Among the parameters tested were voltage-current characteristics, signal and noise characteristics, and frequency response. The silicon operational techniques tested were voltage amplification, current amplification, reverse biasing, transformer coupling, and inductance coupling. It was found that (1) the lead sulfide photoconductive cell still retains its position as an important photodetector for use in low frequency, near-infrared applications, and (2) maximum performance from the diffused junction silicon photodiode is realized when the detector is operated under DC short-circuit conditions. A theoretical discussion of the operation of the two detectors is also presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 19, 1966
- Accession Number
- AD0636267
Entities
People
- Gary N. Motin
Organizations
- Navy Underwater Sound Laboratory