THIN FILM MICROCIRCUIT INTERCONNECTIONS.
Abstract
Process specifications for the deposition of all the thin films have been finalized. The technique for fabricating tantalum-aluminum films has been changed. AC impedance measurements at 200 MHz indicate that this technique is not as good as DC measurements for the evaluation of interfacial interconnections. Reflectance observations using a time domain reflectometer were negative because of inadequate resolution. Accelerated aging of interfacial interconnections at 240 C and 300 C in air have been run. Aging at 300 C is too ripid for useful correlation with 200 C tests for 1000 hours. Additional power handling characteristics for various interfacial interconnections have been established. The five most promising crossover combinations have been chosen, using a SiO dielectric thickness of 5000 A. Thermal cycling, accelerated aging and humidity tests have been performed on the various crossover combinations. An automatic breakdown tester has been built and evaluated. Additional adhesion tests have been performed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1966
- Accession Number
- AD0636546
Entities
People
- Harold M. Greenhouse
- Robert T. Galla
- Theodore H. Yaffe
- Winfield W. Richardson