A NEW LIMITATION IN FIELD-EFFECT TRANSISTOR OPERATION.

Abstract

A recent study of the behavior of the channel in a field effect transistor indicates that the diffusion mode of operation is the fundamental mode. An additional probable conclusion is that all solid state active devices developed will prove to be transconductance controlled and their transconductance limits can be defined in terms of the Fermi constant. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1966
Accession Number
AD0636565

Entities

People

  • Keats A. Pullen Jr.

Organizations

  • Ballistic Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Diffusion
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Transconductance
  • Transistors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design