SEMICONDUCTOR HETEROJUNCTION STRUCTURE STUDIES.
Abstract
Research on the fabrication of a semi-insulating GaAs-Ge-Ge space charge limited triode is discussed. This includes a discussion of the close-speed gallium arsenide growth system and the metallurgical and electrical properties of the resulting growths. A method of diffusing a thin p type layer into n type germanium is discussed as well as a low temperature method of alloying contacts to gallium arsenide. The close-spaced growth of ZnSe on Ge for the study of the electrical and optical properties of the ZnSe-Ge heterojunction is described. Results of the growths and a means of making contact to ZnSe are discussed. A theoretical comparison of the optical properties of heterojunction and homojunction photocells is made and a photo-capacitive method of measuring very short lifetimes is considered for heterojunctions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 14, 1966
- Accession Number
- AD0636806
Entities
People
- Arthur G. Milnes
- Donald L. Feucht
Organizations
- Carnegie Institute of Technology