METALLURGICAL RESEARCH AND DEVELOPMENT FOR CERAMIC ELECTRON DEVICES

Abstract

Fifteen special 94% and 99% alumina ceramics in the system SiO2-CaO- Al2O3 with a SiO2/CaO ratio of 1:1 and 2:1 were fabricated and their behavior characterized. It was tentatively established that the rate determining mechanism of alumina solution both during the initial processing of the ceramic and during its subsequent reaction during metallizing with refractory metal paints containing oxide additions, was the chemical reaction rate. Lucalox, sapphire, beryllia and fused quartz vacuum tight seals were made and their sealing mechanisms were examined as were those of several commercial alumina ceramics. It was established that chemical and/or semiconducting bond mechanisms were responsible for the actual sealing process of refractory metal to the oxide substrate. The electrical studies included dc resistance measurements, low power rf conduction and dielectric loss studies, and high power loss studies. In addition to usage on high power klystrons, the low loss metallizing development in this study can profitably be used on planar triodes and reflex klystrons.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1966
Accession Number
AD0636950

Entities

People

  • C. Barnes
  • L. Reed
  • Rick McRae
  • S. Vogel
  • W. Wade

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Synthesis
  • Chemistry
  • Crystal Structure
  • Electrical Properties
  • Material Degradation Processes
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Materials Testing
  • Measurement
  • Mechanical Working
  • Phase Diagrams
  • Surface Properties
  • Test And Evaluation
  • Test Methods

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Plasma Physics.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene