PRODUCTION ENGINEERING MEASURE FOR SILICON NPN SWITCHING TRANSISTORS.
Abstract
An increase in basewidth resulted in improved beta and breakdown voltage range control. Diffusion time, temperature, and gas flow variations was studied and show no adverse variation. A change in oxide etching solution and temperature resulted in increased photoresist yields. Test of KMER versus KTFR emulsions have shown KMER to be superior in small pattern processing. The cause of discolored aluminum metallization was traced to the presence of oxygen in the evaporator. Installation of an ultrasonic wire bonder and in-process quality assurance wire bond inspection proved to be valuable in increasing assembly yields. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 25, 1965
- Accession Number
- AD0637114
Entities
People
- Charles Steinmann
- Jack Freese
Organizations
- Motorola Mobility