HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).

Abstract

The report presents the results obtained from preproduction testing of three device types, details of circuitry considerations of turn-on time measurements, results of investigation of gate-cathode impedance of the 2N1765 device type, and evaluation of 3-terminal reliability and 2-terminal dv/dt problems. Preliminary investigation of producing a device with electrical characteristics similar to the 2N1765 but housed in a 7/16 inch stud package was performed and the results are reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 29, 1966
Accession Number
AD0637205

Entities

People

  • Robert Burlingame

Organizations

  • Motorola Mobility

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Impedance
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Measurement
  • Reliability
  • Semiconductors
  • Solid State Electronics
  • Terminals
  • Test And Evaluation

Readers

  • Aerospace Test and Evaluation
  • Electrical Engineering

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems