PRODUCTION ENGINEERING MEASURE FOR IMPROVEMENT OF PRODUCTION TECHNIQUE TO INCREASE THE RELIABILITY FOR PNP INTERMEDIATE POWER SILICON PLANAR SWITCHING TRANSISTORS, INCLUDING 2N3502.
Abstract
This report describes the completed process for oxidizing wafers in an epitaxial reactor. It includes a discussion of the process techniques and of the effects of thin and thick oxide layers. Life test results on wafers with thin and thick oxides are evaluated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1966
- Accession Number
- AD0637577
Entities
People
- D. Floyd
- J. Knudsen