LOW-TEMPERATURE SPECTRAL EMITTANCE MEASUREMENTS.
Abstract
Instrumentation was developed for measuring the spectral emittance of both transparent and opaque solids from 2 to 50 millimicrons at temperatures ranging from 4.2 to 500K. The technique was used to study the optical properties of semiconductors, such as germanium, silicon, gallium phosphide, gallium arsenide, gallium antimonide, indium arsenide, and indium antimonide. Measurements were made on materials of use in infrared optics, such as Irtran 1, 2, 3, 4, and 5; glass; quartz; sapphire; and arsenic trisulfide; and on surface coatings and preparations used for thermal control in space applications. The instrumentation is described, and several spectra are shown which demonstrate the information to be gained from this type of measurement. Interpretation of the results is discussed, and the advantages and disadvantages of the method are explained. The relationship between the spectral emittance and the temperature dependence of the total emittance or total absorptance is pointed out. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1966
- Accession Number
- AD0637742
Entities
People
- D. L. Stierwalt
Organizations
- Naval Ordnance Laboratory