IONIZATION WAVES IN SEMICONDUCTORS AND GASEOUS PLASMAS.

Abstract

A theory for ionization waves in plasmas is developed. If the ionization rate depends strongly on carrier temperature such waves may propagate and an instability which in some cases is absolute, can occur. The wave has a phase velocity opposite the electron drift and can have either positive or negative group velocity. The theory agrees qualitatively, but not in details with that previously developed by Pekarek for striations in gaseous discharges. In particular the theory is applied to InSb, which is a favourable solid state material for observations of ionization waves. Instabilities are predicted for bulk p-type and thin layers of intrinsic material. The possibility of a new kind of negative resistance instability in semiconductors is pointed out. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 31, 1966
Accession Number
AD0637866

Entities

People

  • Bengt Andersson
  • Peter Weissglas

Organizations

  • Royal Institute of Technology

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Electrons
  • Group Velocity
  • Instability
  • Ionization
  • Materials
  • Observation
  • Phase Velocity
  • Resistance
  • Semiconductors
  • Solid State Electronics
  • Striations

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics