ELECTRON-SPIN-RESONANCE IN FAST-NEUTRON-IRRADIATED PHOSPHORUS-DOPED SILICON.
Abstract
Damage produced in phosphorus-doped silicon by fast-neutron irradiation is being investigated. Electron-spin-resonance techniques are used to obtain information which should aid in an understanding of the nature of the lattice defects produced. Preliminary observations concerning the experimental problems involved and the techniques appropriate to their solution are presented. A discussion of the background pertinent to such an investigation is also included. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1966
- Accession Number
- AD0637937
Entities
People
- A. A. Temperley
- C. A. King Jr.