PREPARATION OF THIN-FILM TUNNELING STRUCTURES.
Abstract
Vacuum deposition techniques were developed for the preparation of thin-film metal-insulator-metal structures, and the tunneling capabilities of these structures were explored by testing them for their V-I characteristics. The structures primarily investigated were A1-SiO-A1 and A1-SiO-Au structures. A limited number of experiments were performed with A1-A12O3-A1 samples. Various methods described in detail in the report were used for forming the films. The thickness of the films was monitored using a laboratory-made quartz crystal oscillator as well as a commercially available instrument. Automatic control of the deposition rate and the thickness of the films was attempted and the reliability of the method explored. The A1-A12O3-A1 structures showed poor results when tested for their V-I characteristics. The breakdown strength of the samples was insufficient. Applied voltages of only a few tenths of a volt caused instant dielectric breakdown. Far better results were obtained with the structures in which SiO served as the insulator. The best structures displayed stable, tunneling-like V-I characteristics. Also, the lifetime of the devices was improved. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1966
- Accession Number
- AD0638416
Entities
People
- D. Dobischek
- S. Cabell
Organizations
- United States Army Communications-Electronics Command